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Preliminary data
IDD15E60
Product Summary VRRM IF VF Tjmax 600 15 1.45 175
P-TO252-3-1.
Feature Fast recovery Soft switching
600 V EmCon
technology
Low reverse recovery charge Low forward voltage 175C operating temperature Easy paralleling
Type IDD15E60
Package P-TO252-3-1.
Maximum Ratings,at Tj = 25 C, unless otherwise specified Parameter Repetitive peak reverse voltage Continous forward current
TC=25C TC=90C
Surge non repetitive forward current
TC=25C, tp =10 ms, sine halfwave
Maximum repetitive forward current
TC=25C, tp limited by Tjmax, D=0.5
Power dissipation
TC=25C TC=90C
Operating and storage temperature Soldering temperature
for 10 s (according to JEDEC J-STD-020A)
Fast Switching EmCon
Diode
V A V C

Ordering Code Q67040-S4380
Marking D15E60
Pin 1 NC
PIN 2 C
PIN 3 A
Symbol VRRM IF
Value 600 29.2 19.6
Unit V A
IFSM IFRM Ptot
60 45 W 83.3 47.2
Tj , Tstg TS
-55...+175 255
C C
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2001-12-05
Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area 1)
IDD15E60
Symbol min. RthJC RthJA -
Values typ. max. 1.8 75 50
Unit
K/W
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Reverse leakage current
VR =600V, Tj =25C VR =600V, Tj =150C
Symbol min. IR VF -
Values typ. max.
Unit
A 1.45 1.45 50 1250 V 2 -
Forward voltage drop
IF =15A, Tj=25C IF =15A, Tj=150C
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2
2001-12-05
Preliminary data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Reverse recovery time
VR =400V, IF =15A, diF /dt=1000A/s, Tj =25C VR =400V, IF =15A, diF /dt=1000A/s, Tj =125C VR =400V, IF =15A, diF /dt=1000A/s, Tj =150C
IDD15E60
Symbol min. trr Irrm Qrr S -
Values typ. max.
Unit
ns 87 124 131 13.7 16.4 19.3 595 995 1104 3.6 4.3 4.5 A nC -
Peak reverse current
VR =400V, IF = 15 A, diF /dt=1000A/s, Tj =25C VR =400V, IF =15A, diF/dt=1000A/s, Tj =125C VR =400V, IF =15A, diF/dt=1000A/s, Tj =150C
Reverse recovery charge
VR =400V, IF =15A, diF /dt=1000A/s, Tj =25C VR =400V, IF =15A, diF/dt=1000A/s, Tj =125C VR =400V, IF =15A, diF/dt=1000A/s, Tj =150C
Reverse recovery softness factor
VR =400V, IF =15A, diF /dt=1000A/s, Tj =25C VR =400V, IF =15A, diF /dt=1000A/s, Tj =125C VR =400V, IF =15A, diF /dt=1000A/s, Tj =150C
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2001-12-05
Preliminary data 1 Power dissipation Ptot = f (TC )
90
IDD15E60
2 Diode forward current IF = f(TC )
30
parameter: Tj
W
175 C
parameter: Tj 175C
A
70
Ptot
60 50
20
IF
15 40 30 20 5 10 0 25 0 25 10
50
75
100
125
C TC
175
50
75
100
125
C TC
175
3 Typ. diode forward current IF = f (VF )
9
4 Typ. diode forward voltage VF = f (Tj )
2
A
V
30A
7 6 5
-55C 25C 100C 150C
1.8 1.7
VF
IF
1.6 1.5
15A
4 1.4 3 2 1 0 0 1.3
7.5A
1.2 1.1 1 -60
0.5
1
1.5
V VF
2.5
-20
20
60
100
C 160 Tj
Page 4
2001-12-05
Preliminary data 5 Typ. reverse recovery time trr = f (diF /dt) parameter: VR = 400V, Tj = 125C
500
IDD15E60
6 Typ. reverse recovery charge Qrr =f(diF /dt) parameter: VR = 400V, Tj = 125 C
2600
ns
400
nC
60A
2200 350 300 250 200 150 1400 100 50 0 200 1200
15A
30A 15A 7.5A
Qrr
trr
2000
1800
30A
1600
300
400
500
600
700
800
A/s 1000 diF /dt
1000 200
300
400
500
600
700
800
A/s 1000 diF /dt
7 Typ. reverse recovery current Irr = f (diF/dt) parameter: VR = 400V, Tj = 125C
A
18
8 Typ. reverse recovery softness factor S = f(400) parameter: VR = 400V, Tj = 125C
11
16 15 14
30A 15A 7.5A
9
Irr
S
13 12 11 10 9 8 7 6 5 4 200 300 400 500 600 700 800
8
30A
7
15A
6
7,5A
5
4
A/s 1000 diF /dt
3 200
300
400
500
600
700
800
A/s 1000 diF /dt
Page 5
2001-12-05
Preliminary data 9 Transient thermal impedance ZthJC = f (tp ) parameter : D = tp /T
10 1
IDD15E60
IDD15E60
K/W
10 0
Z thJC
10 -1
D = 0.50 0.20 0.10 0.05 0.02 single pulse 0.01
10 -2
10 -3 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
Page 6
2001-12-05
Preliminary data
P-TO252 (D-Pak)
dimensions symbol min A B C D E F G H K L M N P R S T U 2.19 0.76 0.90 5.97 9.40 0.46 0.87 0.51 5.00 4.17 0.26 6.40 5.25 (0.65) 0.63 2.28 2.39 0.98 1.21 6.23 10.40 0.58 1.15 1.02 [mm] max 6.73 5.50 (1.15) 0.89 min 0.2520 0.2067 0.0248
IDD15E60
inch] max 0.2650 0.2165 0.0350
(0.0256) (0.0453) 0.2520 0.0862 0.0941 0.0299 0.0354 0.2350 0.3701 0.0181 0.0343 0.0201 0.1969 0.1642 0.0102 0.0386 0.0476 0.2453 0.4094 0.0228 0.0453 0.0402 -
Page 7
2001-12-05
Preliminary data
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer.
IDD15E60
Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Page 8
2001-12-05

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